Posted: October 8, 2013

Toshiba Corporation today announced that it has developed an SP10T[1] RF antenna switch with a MIPI® RFFE[2] interface that achieves the lowest insertion loss[3] and smallest size in the industry[4] for the smartphone market. Sample shipment starts from today.

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The new product uses “TaRF5”, a new generation TarfSOI™ (Toshiba advanced RF SOI)[5] process using silicon on insulator (SOI) technology[6]. By using the TaRF5 process, the new samples achieve a 25% improvement in insertion loss (f=2.7GHz) and a 40% size reduction against products using the TaRF3 process. These improvements can lead to longer battery operating time and smaller mounting space, which can also contribute to smaller sizes for products in which they are used.

Since developing the SOI-CMOS process for smartphone RF antenna switches in 2009, Toshiba has continually developed new generation processes and devices offering improved performance. With LTE now being implemented worldwide, and LTE-Advanced[7] expected to follow, requirements for RF antenna switches are leaning towards multi-port and complex functions. To meet those market demands, Toshiba plans to continue to develop products with low insertion loss and smaller sizes.

Notes
[1] Single Pole Ten Throw Switch
[2] The RF front-end interface developed by the MIPI Alliance, Inc.
MIPI is a registered trademark of the MIPI Alliance, Inc.
[3] The loss of electric power that occurs when current goes from one terminal to another in a radio frequency circuit, expressed in decibels.
[4] In the RF antenna switch market as of October 8, 2013. Toshiba survey.
[5] TarfSOI™ is a trademark of Toshiba Corporation.
[6] The technology forms an insulation film under the channel of the MOSFET and reduces stray capacity to improve speed and power saving of the CMOS LSI.
[7] A new communication standard developed by the 3GPP standard development organization. One of the fourth generation mobile communication systems defined by ITU.
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